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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode
IXFK24N100 IXFX24N100
VDSS ID25
RDS(on)
trr
= =
1000V 24A 390m 250ns
TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force Mounting torque PLUS247 TO-264 (PLUS247) (TO-264) Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 1000 1000 20 30 24 96 24 3 5 560 -55 ... +150 150 -55 ... +150 300 260 20..120/4.5..27 1.13/10 6 10 V V V V A A A J V/ns W C C C C C N/lb. Nm/lb.in. g g
G = Gate S = Source D = Drain TAB = Drain (TAB) G D (TAB)
S
PLUS247 (IXFX)
Features * * * * * * International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Avalanche rated Low package inductance Fast intrinsic rectifier
Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor drives * Temperature and lighting controls Advantages * PLUS 247TM package for clip or spring mounting * Space savings * High power density
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 0.5 * ID25, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 1000 3.0 5.5 V V
200 nA 100 A 2 mA 390 m
(c) 2008 IXYS CORPORATION, All rights reserved
DS98598D(10/08)
IXFK24N100 IXFX24N100
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 15 27 8700 785 315 35 35 75 21 267 52 142 S pF pF pF ns ns ns ns nC nC nC 0.22 C/W C/W TO-264 (IXFK) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = 24A, VGS = 0V, Note 1 IF = 24A, -di/dt = 100A/s VR = 100V, VGS = 0V 1.0 8 .0 Characteristic Values Min. Typ. Max. 24 96 1.5 A A V PLUS 247TM (IXFX) Outline
250 ns C A
Note 1: Pulse test, t 300s; duty cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFK24N100 IXFX24N100
Fig. 1. Output Characteristics @ 25C
24 VGS = 10V 7V 20 55 50 45 40 7V VGS = 10V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
ID - Amperes
16 6V
35 30 25 20 15 6V
12
8
4 5V 0 0 1 2 3 4 5 6 7 8 9
10 5 0 0 3 6 9 12 15 18 21 24 27 30 5V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
24 VGS = 10V 20 2.8 2.6 2.4
Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature
VGS = 10V
ID - Amperes
16
RDS(on) - Normalized
6V
2.2 2.0 1.8 1.6 1.4 1.2 1.0 I D = 12A I D = 24A
12
8
4
5V
0.8 0.6
0 0 2 4 6 8 10 12 14 16 18 20
0.4 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current
2.6 2.4 VGS = 10V TJ = 125C 28 24 20
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
2.2
ID - Amperes
TJ = 25C 0 5 10 15 20 25 30 35 40 45 50 55
2.0 1.8 1.6 1.4
16 12 8
1.2 1.0 0.8 4 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXFK24N100 IXFX24N100
Fig. 7. Input Admittance
45 40 50 35 TJ = 125C 25C - 40C 25C 60 TJ = - 40C
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
30 25 20 15 10
40
30
125C
20
10 5 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 0 5 10 15 20 25 30 35 40 45 50
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
70 60 8 50 7 10 9 VDS = 500V I D = 12A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 25C
40 TJ = 125C 30 20 10
6 5 4 3 2 1
0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0 0 30 60 90 120 150 180 210 240 270
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1.000
Fig. 12. Maximum Transient Thermal Impedance
f = 1MHz Capacitance - PicoFarads
Ciss
Coss 1,000
Crss 100 0 5 10 15 20 25 30 35 40 0.010 0.001
Z(th)JC - C / W
10,000
0.100
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_24N100(9X)10-17-08-C

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